Triode/MOS tube/transistor/module
N-channel, 500V, 18A
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VBsemi (Wei Bi)
İstehsalçılar
VBsemi (Wei Bi)
İstehsalçılar
ST (STMicroelectronics)
İstehsalçılar
HXY MOSFET (Huaxuanyang Electronics)
İstehsalçılar
Field effect transistor (MOSFET) N+N channel, VDSS withstand voltage 40V, ID current 12A, RDON on-resistance 16mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.0-2.0V,
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HXY MOSFET (Huaxuanyang Electronics)
İstehsalçılar
onsemi (Ansemi)
İstehsalçılar
The MJE/MJF13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. These devices are suitable for 115 and 220 V switch-mode applications such as switching regulators, inverters, motor controls, solenoid valve/relay drivers, and reflective circuits.
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CJ (Jiangsu Changdian/Changjing)
İstehsalçılar
onsemi (Ansemi)
İstehsalçılar
UltraFET devices combine features to deliver benchmark efficiency in power conversion applications. These devices are optimized for rDS(on), low ESR, low total charge and Miller gate charge for high frequency DC/DC converters.
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DIODES (US and Taiwan)
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LRC (Leshan Radio)
İstehsalçılar
onsemi (Ansemi)
İstehsalçılar
FUXINSEMI (Fuxin Senmei)
İstehsalçılar
ST (STMicroelectronics)
İstehsalçılar
VISHAY (Vishay)
İstehsalçılar
P-channel, -150V, -0.84A, 1.77Ω@-10V
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VISHAY (Vishay)
İstehsalçılar
SPS (American source core)
İstehsalçılar
HUAYI (Hua Yi Wei)
İstehsalçılar