Triode/MOS tube/transistor/module

Type P VDSS(V) -40 ID@TC=64?C(A) -6 PD@TC=64?C(W) 1.4 VGS(V) ±20 RDS(on)(m?)Max.@TC= 25?C VGS=4.44V 58

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N groove 30V 75A

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P-channel, -30V, -3.8A, 70mΩ@-10V

MOS tube type: N-channel drain-source voltage (Vdss): 60V Continuous drain current (Id): 3A Power (Pd): 1.2W On-resistance (RDS(on)@Vgs,Id): 92mΩ@4.5V, 2A Threshold Voltage (Vgs(th)@Id): 2V@250uA Input Capacitance (Ciss@Vds): 330pF@10V Operating Temperature: -55℃~+150℃@(Tj)

NPN

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