Triode/MOS tube/transistor/module

N-Channel, PowerTrench MOSFET, 60V, 300A, 1.1mΩ

DTC123ECA-F2-0000HF

N-channel, 60V, 1.9A, 250mΩ@10V

N-channel, 60V, 90A, 6mΩ@10V

Drain-source voltage (Vdss): 100V Continuous drain current (Id): 15.2A Power (Pd): 42W On-resistance (RDS(on)@Vgs,Id): 65mΩ@10V,5A

This bipolar power transistor is suitable for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

Power MOSFET, 20 V, 780 mA, Single P-Channel, ESD Protected, SOT-723

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 8 ID(A)Max. 5 VGS(th)(v) 0.75 RDS(ON)(m?)@4.135V 50 Qg(nC)@4.5V 6.4 QgS(nC) 0.54 Qgd(nC) 1.25 Ciss(pF) 450 Coss(pF) 70 Crss(pF) 43