Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 40 VGS(V) 20 ID(A)Max. 290 VGS(th)(v) 1.8 RDS(ON)(m?)@4.468V 1.5 Qg(nC)@4.5V - QgS(nC) 34 Qgd(nC) 25 Ciss(pF) 8102 Coss(pF) 945 Crss(pF) 410

The FSB50550AS is an advanced Motion SPM 5 series based on Fast Recovery MOSFET (FRFET) technology and can be used as a compact inverter solution for low power motor drive applications such as fans and pumps. The FSB50550AS contains six FRFET MOSFETs, three half-bridge gate driver HVICs with temperature sensing, and three bootstrap diodes in a fully isolated compact encapsulation for optimum thermal performance. The FSB50550AS has low Electromagnetic Interference (EMI) characteristics due to optimized switching speed and reduced parasitic inductance. Because FSB50550AS uses MOSFETs as power switches, it is much more robust and has a larger safe operating area (SOA) than IGBT-based power modules. The FSB50550AS solution is suitable for compact and reliable inverter designs where assembly space is limited.

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N-channel, 250V, 10A

MOS tube type: P channel Drain-source voltage (Vdss): 55V Continuous drain current (Id): 300mA Power (Pd): 1W On-resistance (RDS(on)@Vgs,Id): 4.5Ω@10V, 300mA

N-channel, 50V, 305mA

N-channel, 40V, 100A, 2.4Ω@10V