Triode/MOS tube/transistor/module

N-Channel 130V 0.1A 0.5W

N+P channel, 20V/3A (-20V/-2A)

This dual NPN PNP bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-563 encapsulation and is suitable for low power surface mount applications.

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 223A Power (Pd): 178W On-Resistance (RDS(on)@Vgs,Id): 1.25mΩ@10V,30A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 102nC@10V Input capacitance (Ciss@Vds): 5.471nF@30V, Vds=60V Id=223A Rds=1.25mΩ, working Temperature: -55℃~+150℃@(Tj)

Transistor Type: 1 NPN - Pre-biased Power (Pd): 150mW Collector Current (Ic): 100mA Collector-Emitter Breakdown Voltage (Vceo): 50V Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage ( VCE(sat)@Ic,Ib): 250mV@10mA, 1mA DC current gain (hFE@Ic,Vce): 30@10mA, 5V

N channel

1700V 650mΩ

N-channel 100V 15A 100mΩ@4.5V