Triode/MOS tube/transistor/module

CSD16409Q3 N-Channel NexFET™ Power MOSFET

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 85 VGS(th)(v) 1.2 RDS(ON)(m?)@4.362V 7.8 Qg(nC)@4.5V 20 QgS(nC) 7.6 Qgd(nC) 7.2 Ciss(pF) 2295 Coss(pF) 570 Crss(pF) 210

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PNP -45V -500mA 160-400 SOT-23

This N-channel JFET device is suitable for high frequency amplifiers and oscillators.

This N-channel JFET device is suitable for high frequency amplifiers and oscillators.