Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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VBsemi (Wei Bi)
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SPS (American source core)
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NCE (Wuxi New Clean Energy)
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ROHM (Rohm)
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CRMICRO (China Resources Micro)
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Photovoltaic inverter energy storage UPS power supply VCE=650V Ic=40A Ptot=188W Vce(sat)=1.45V 175℃ Replace Infineon IKW40N65H5 Silan SGTP40V65FDR1P7
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onsemi (Ansemi)
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The seven NPN Darlington junction transistors in these arrays are ideal for driving lamps, relays or printing hammers in a variety of industrial and consumer applications. Its high breakdown voltage and internal suppression diodes ensure that inductive loads will not be a problem. The peak inrush current of up to 500 mA enables it to drive incandescent lamps. The MC1413, B with 2.7 kΩ series input resistors is suitable for systems using 5.0 V TTL or CMOS logic.
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onsemi (Ansemi)
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PNP, Vceo=-100V, Ic=-3A
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Infineon (Infineon)
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VBsemi (Wei Bi)
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AnBon (AnBon)
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TECH PUBLIC (Taizhou)
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ROHM (Rohm)
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N-channel MOSFET transistor with ESD protection/60V/0.25A/2.4Ω@10V/0.2W
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ROHM (Rohm)
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JH (Jingheng)
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UTC(Youshun)
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Infineon (Infineon)
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N-channel, 200V, 94A, 23mΩ@10V
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