Triode/MOS tube/transistor/module

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

N-channel, Vds=100V, Id=100A

N-channel 20V 7.6A

Dual N-channel, 30V, 4A, 0.065Ω@10V

Type: N-Channel Drain-Source Voltage (Vdss): 100V Continuous Drain Current (Id): 80A Power (Pd): 78W On-Resistance (RDS(on)@Vgs,Id): 8.0mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 2.0V@250uA Gate charge (Qg@Vgs): 36.5nC@10V Input capacitance (Ciss@Vds): 1.978nF@50V , Vds=100V Id=80A Rds=8.0mΩ, Working temperature: -55℃~+150℃@(Tj)