Triode/MOS tube/transistor/module

P-channel, -30V, -5A, 23mΩ@-10V

BJT PNP Collector-Emitter Breakdown Voltage (Vceo): 100V Collector Current (Ic): 6A Power (Pd): 2.5W Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@6A ,600mA DC current gain (hFE@Ic,Vce): 15@3A,4V Characteristic frequency (fT): 3MHz Operating temperature: +150℃@(Tj)

NPN

NPN, Vceo=450V, Ic=5A

N channel