Triode/MOS tube/transistor/module

NPN, Vceo=30V, Ic=5A

-8V, P-Channel NexFET MOSFET™, Single LGA 1.2x1.2, 9.9mΩ 4-PICOSTAR -55 to 150

NPN,Vceo=80V,Ic=1A

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This Darlington bipolar power transistor is suitable for general power supply and switching, such as output and driver stages in switching regulators, converters, and power amplifier applications. MJD112 (NPN) and MJD117 (PNP) are complementary devices.

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 90A Power (Pd): 54W On-Resistance (RDS(on)@Vgs,Id): 4.8mΩ@10V,20A Threshold Voltage (Vgs(th)@Id): 1.6V@250uA Gate charge (Qg@Vgs): 33nC@10V Input capacitance (Ciss@Vds): 1.28nF@30V, Vds=60V Id=90A Rds=4.8mΩ, working Temperature: -55℃~+150℃@(Tj)

N-channel, 30V, 180mA, 4.5Ω@10V

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce both system cost and board space.

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