onsemi (Ansemi)
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NCP5111DR2G Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge

NCP5111DR2G

Half Bridge IGBT MOSFET Sink 500mA Source 250mA Power MOSFET/IGBT Driver, Single Input, Half Bridge
Hissə nömrəsi
NCP5111DR2G
Kateqoriya
Power Chip > Gate Driver IC
İstehsalçı/Brend
onsemi (Ansemi)
İnkapsulyasiya
SOIC-8
Qablaşdırma
taping
Paketlərin sayı
2500
Təsvir
The NCP5111 is a high voltage power gate driver driver with two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in a half-bridge configuration. It uses a bootstrap technique to ensure proper driving of the high side power switch.
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Stokda 90532 PCS
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Açar sözlərNCP5111DR2G
NCP5111DR2G Elektron komponentlər
NCP5111DR2G Satış
NCP5111DR2G Təchizatçı
NCP5111DR2G Distribyutor
NCP5111DR2G Məlumat cədvəli
NCP5111DR2G Şəkillər
NCP5111DR2G Qiymət
NCP5111DR2G Təklif
NCP5111DR2G Ən aşağı qiymət
NCP5111DR2G Axtar
NCP5111DR2G Satınalma
NCP5111DR2G Çip