Diode/Bridge Rectifier

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

I(AV) 20 VRRM(V) 80 IFsM(A) 320 VFM(V) 0.57 VFMI(AV)(A) 20 IRM@VRRM(μA) Silicon carbide20