Diode/Bridge Rectifier

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100V3A VF=0.79V

The Schottky diode uses the Schottky diode potential barrier principle and adopts a large-area metal-silicon power diode.

I(AV) 30 VRRM(V) 45 IFsM(A) 300 VFM(V) 0.58 VFMI(AV)(A) 30 IRM@VRRM(μA) 8

I(AV) 20 VRRM(V) 150 IFsM(A) 160 VFM(V) 0.67 VFMI(AV)(A) 20 IRM@VRRM(μA) 1.5

The Ultrafast power rectifier is suitable for high voltage, high frequency rectification, or as freewheeling and protection diodes in surface mount applications where compact size and weight are critical.

This common anode switching diode is suitable for ultra high speed switching applications. The device features SC-59 encapsulation and is suitable for low power surface mount applications.

This common anode switching diode is suitable for ultra high speed switching applications. The device features SC-59 encapsulation and is suitable for low power surface mount applications.