Diode/Bridge Rectifier

Silicon carbide (SiC) Schottky diode uses a new technology that can provide excellent switching performance and has higher reliability than silicon. Silicon carbide's no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance make it a next-generation power semiconductor product. System benefits include highest energy efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

VR=60V IO=5A VF=0.49V@5A

Reverse voltage drop 200V, forward voltage drop 0.9V, reverse leakage current 20uA, current 20A

VR=150V IO=5A VF=0.88V@5A

Diode configuration: stand-alone DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 3A Forward voltage drop (Vf): 1.3V@3A Reverse recovery time (trr): 150ns