Diode/Bridge Rectifier

Diode Configuration: Independent Power: 350mW DC Reverse Withstand Voltage (Vr): 100V Average Rectified Current (Io): 150mA Forward Voltage Drop (Vf): 1.25V@150mA Reverse Recovery Time (trr): 4ns

VR=30V IO=100mA VF=0.45V@10mA

GBJ3508A-B1-0000

I(AV) 2 VRRM(V) 200 IFsM(A) 50 VFM(V) 0.95 VFMI(AV)(A) 2 IRM@VRRM(μA) 0.05

I(AV) Silicon carbide 30.0 VRRM(V) 45 IFsM(A) 300 VFM(V) 0.58 VFMI(AV)(A) Silicon carbide 30.0 IRM@VRRM(μA) 8