Optocoupler/LED/nixie tube/photoelectric device

Light-emitting diode 7060 infrared emission 940 (2w)

3535 deep ultraviolet UVC LED 275nm 5.0-7.0v 120 degrees 3-5mw

The CNY17XM, CNY17FXM, and MOC810XM devices contain Gallium Arsenide infrared light-emitting diodes coupled to NPN phototransistors in dual-row plug-inencapsulation.

Meihua Electronics LED SMD patch 0805 top light, transparent colloid, bright emerald green light, voltage VF: 2.7-3.3V, brightness Iv: 360-900nmcd, dominant wavelength λd: 517.5-527.5nm, light angle: 140deg

The FOD814 consists of two anti-parallel GaAs infrared light-emitting diodes that drive the output of a silicon phototransistor in a 4-pin dual column plug-inencapsulation. The FOD817 series contains Gallium Arsenide Infrared Emitting Diodes driving silicon phototransistors in a 4-pin dual column plug-inencapsulation.

0805 emerald green with zener (gold wire), top light, SMD positive sticker, forward rated current: 25mA, forward voltage: 2.55V-3.35V,

Color Color Blue Test current IF(mA) 20 Voltage VF(V) 3.2 Light intensity IV(mcd) 300 Light intensity IV(mcd) 650 Wavelength/color coordinate 470