Optocoupler/LED/nixie tube/photoelectric device

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.

The MOC3071M, MOC3072M, and MOC3073M consist of a GaAs infrared light-emitting diode optically coupled to a non-zero-crossing silicon bidirectional switch (three-way device). These devices isolate low voltage logic from the 240 VAC line and provide random phase control of high current triacs or thyristors. These devices have enhanced static dv/dt capability to ensure stable switching performance for inductive loads.

The FOD3180 is a 2 A output current, high speed MOSFET gate driver optocoupler. It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode (LED) optically coupled to a CMOS detector with a circuit power stage integrating PMOS and NMOS output power transistors. It is suitable for high frequency driving of power MOSFETs used in plasma display panels (PDP), motor control inverter applications and high performance DC-DC converters. The device is encapsulated in an 8-pin dual-wire inner case and is compatible with 260°C reflow processes for leadless soldering machine compliance.

The FOD814 consists of two Gallium Arsenide infrared emitting diodes in a 4-pin dual-wire encapsulation, connected in anti-parallel, driving a silicon phototransistor output. The FOD817 series includes a Gallium Arsenide Infrared Emitting Diode driving a Silicon Phototransistor within a 4-pin 2-in-line encapsulation.