Triode/MOS tube/transistor/module
VBsemi (Wei Bi)
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CJ (Jiangsu Changdian/Changjing)
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HT (Golden Honor)
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ST (STMicroelectronics)
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HL (Howlin)
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N-channel, 600V, 12A, 650mΩ@10V
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Convert Semiconductor
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TECH PUBLIC (Taizhou)
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TECH PUBLIC (Taizhou)
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PIP (Li Jun)
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PIP (Li Jun)
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DIODES (US and Taiwan)
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DIODES (US and Taiwan)
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GOFORD (valley peak)
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SPS (American source core)
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MSKSEMI (Mesenco)
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JSMSEMI (Jiesheng Micro)
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, the SUPERFET III MOSFET Easy drive family helps manage EMI issues for easier design implementation.
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STANSON (Statson)
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Type P VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS70°C(A) 7.2 RDS(Max) 25 PD70°C(W) 2.8
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