Triode/MOS tube/transistor/module
ST (STMicroelectronics)
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Infineon (Infineon)
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Convert Semiconductor
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Convert Semiconductor
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DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
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NCE (Wuxi New Clean Energy)
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P-channel 30V 9.1A, Rds<20mΩ@Vgs=-10V super cost-effective
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VBsemi (Wei Bi)
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onsemi (Ansemi)
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P-Channel Switch This device is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. Adopt craft 88 design.
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onsemi (Ansemi)
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P-Channel Switch This device is designed for low-level analog switching, sample-and-hold circuits, and chopper-stabilized amplifiers. Adopt craft 88 design.
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VISHAY (Vishay)
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DIODES (US and Taiwan)
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Ascend (Ansend)
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N-type MOS tube@@VDS20V,ID60A,RDS(on),Typ@VGS=10V5mR
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DIODES (US and Taiwan)
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NPN, Vceo=12V, Ic=3A
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WINSOK (Weishuo)
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Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 12 VGS(th)(v) 1.9 RDS(ON)(m?)@4.268V 13 Qg(nC)@4.5V 6.3 QgS(nC) 2.9 Qgd(nC) 2 Ciss(pF) 770 Coss(pF) 130 Crss(pF) 76
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Ultra high voltage MOS tube
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LONTEN (Longteng Semiconductor)
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onsemi (Ansemi)
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Automotive power MOSFETs for low power applications. 60V 295mA 1.6 Ω dual N-channel SC?88, ESD protected, logic level. AEC-Q101-qualified MOSFETs that meet the Production Part Approval Process (PPAP) for automotive applications.
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