Triode/MOS tube/transistor/module

P-channel, -30V, -0.9A, 300mΩ@-10V

NPN

The combination of low saturation voltage and high gain makes this bipolar transistor ideal for power-saving high-speed switching applications.

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

600V,12A

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