Triode/MOS tube/transistor/module

This Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices.

This Insulated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective Super Field Stop (FS) Trench structure that provides excellent performance for demanding switching applications, provides low on-state voltage, and minimizes switching losses . This IGBT is ideal for UPS and solar applications. The device combines a soft and fast combined encapsulation freewheeling diode with low forward voltage.

TPS1120 Dual P-Channel Enhancement Mode MOSFET

N-channel 2.8A current 20V voltage

N-channel, 60V, 55A, 12mΩ@10V

N-channel, 55V, 2.1A, 160mΩ@4.5V