Triode/MOS tube/transistor/module

Configuration N+P Type P-Ch VDS(V) -20 VGS(V) 12 ID(A)Max. -4.4 VGS(th)(v) -0.68 RDS(ON)(m?)@4.329V 48 Qg( nC)@4.5V 11.5 QgS(nC) 3.5 Qgd(nC) 3.3 Ciss(pF) 1415 Coss(pF) 134 Crss(pF) 102

N-channel, 24V, 72A

Semiconductor transistor field effect transistor MOS tube, TO-220, P channel, withstand voltage: -30V, current: -120A, 10V internal resistance (Max): 0.006Ω, 4.5V internal resistance (Max): 0.0075Ω, power: 130W

Configuration Dual Type N-Ch VDS(V) 20 VGS(V) 12 ID(A)Max. 5.8 VGS(th)(v) 0.7 RDS(ON)(m?)@4.115V 24 Qg(nC)@4.5V 8.3 QgS(nC) 1.4 Qgd(nC) 2.2 Ciss(pF) 625 Coss(pF) 69 Crss(pF) 61

NPN,Vceo=80V,Ic=500mA

MMST2222A-F2-0000HF

IGBT module

Type: N-Channel Drain-Source Voltage (Vdss): 20V Continuous Drain Current (Id): 20A On-Resistance (RDS(on)@Vgs,Id): 7mΩ@10V, 5.5mΩ@4.5V, Threshold Voltage (Vgs (th)@Id): 0.5V to 1.6V VDS=VGS ID=-250μA

N-channel, 700V, 12.5A, 360mΩ@10V