Triode/MOS tube/transistor/module

N-channel 100V 150A

PNP 120W -160V -12A Applications: power amplifier applications Recommended for 80W high-fidelity audio amplifier output stage applications

N-channel, 25V

N-channel, 600V, 66A, 42mΩ@10V

Transistor type: 2 NPN Collector-emitter breakdown voltage (Vceo): 50V Collector current (Ic): 200mA Power (Pd): 150mW Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE( sat)@Ic,Ib): 300mV@100mA, 10mA Characteristic frequency (fT): 200MHz Operating temperature: +125℃@(Tj)

This bipolar power transistor is suitable for general-purpose amplifier and switching applications where isolation of the device mounting surface from a heat sink or chassis is required.