Triode/MOS tube/transistor/module

Field effect configuration: N+P channel N: VDSS withstand voltage 30V, ID current 16A, RDS(ON) on-resistance 30mR@VGS 10V(MAX), VGS(th) turn-on voltage 1 to 2.5V, P: VDSS withstand Voltage-30V, ID current-12A, RDS(ON) on-resistance 40mR@VGS 10V(MAX), VGS(th) on-voltage-1.5V to -2.5V

N-channel, 20V, 6A, 25mΩ@4.5V

ULN2003AI High Voltage, High Current Darlington Transistor Array

PNP Vceo=-60V Ic=-3A PC=2W

NMOS, 100V/135A, RDS(ON)=3.7mR (typ) @ VGS=10V

Type: P-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): -3A Power (Pd): 1.5W On-resistance (RDS(on)

P channel-200V-10A 0.7