Triode/MOS tube/transistor/module

UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 12A, RDON on-resistance 15mR@VGS 10V(MAX), VGS(th) turn-on voltage 1-2.5V,

N-channel, 30V, 380mA, 13Ω@2.5V

RF Transistor NPN

MOSFET N-CH 40V

This N-channel enhancement mode power MOSFET is produced using planar stripe and DMOS proprietary technology. This advanced MOSFET technology is designed for low on-resistance, excellent switching performance and high avalanche energy strength. These devices are suitable for switch mode power supplies, audio amplifiers, DC motor control and variable switching power supply applications.

N-channel, 100V, 75A

P-channel, 20V, 4A, 110mΩ@4.5V

N-channel, 40V, 16A, 5.9mΩ@10V

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.