Triode/MOS tube/transistor/module

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 1.5W Collector cut-off current (Icbo): 100nA Collector-emitter saturation voltage (VCE(sat )@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 250@150mA, 2V Characteristic frequency (fT): 100MHz

N-Channel 400V 0.2A 1.0W

N-channel 60V 25A

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 5.5 VGS(th)(v) 1.4 RDS(ON)(m?)@4.66V 37 Qg(nC)@4.5V 7.6 QgS(nC) 1.3 Qgd(nC) 1.7 Ciss(pF) 391 Coss(pF) 86.2 Crss(pF) 59.4

NPN

N-channel 40V 20A

N-channel, 30V, 11A, 11.9mΩ@10V