Triode/MOS tube/transistor/module

N-channel dual MOS tube

Pmos, -12V -4A, Fuman 3401 upgrade version

P-channel MOS tube, -20V, -3A, 62 milliohms.

MOS, TO-252, N-channel, 40V, 40A, 20mΩ (Max), 45W

Type: N-Channel Drain-Source Voltage (Vdss): 30V Continuous Drain Current (Id): 80A On-Resistance (RDS(on)@Vgs,Id): 4mΩ@10V 8Ω@4.5V, Threshold Voltage (Vgs(th )@Id): 1.0V-2.5V@250uA

NPN, Vceo=25V, Ic=1.5A, hfe=160~300

N-channel, 55V, 104A, 80mΩ@10V

Semiconductor transistor field effect transistor MOS tube, SOP-8, P channel, withstand voltage: -40V, current: -10A, 10V internal resistance (Max): 0.016Ω, 4.5V internal resistance (Max): 0.022Ω, power: 1.7W

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Type: N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 6A Power (Pd): 350mW On-resistance (RDS(on)@Vgs,Id): 27mΩ@4.5V, 3A