Triode/MOS tube/transistor/module

NPN,Vceo=60V,Ic=300mA

N-channel, 20V, 2.9A, 30mΩ@4.5V

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Type: P-Channel Drain-Source Voltage (Vdss): -12V Continuous Drain Current (Id): -4.3A Power (Pd): 1.56W On-Resistance (RDS(on)@Vgs,Id): 40mΩ@-4.5 V,-3A Threshold voltage Vgs(th)@Id): -0.4V to -1.0V@250uA

Commercial power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance.

MOSFET Type P Drain-Source Voltage (Vdss) (V) -30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 15/20 Continuous Drain Current ID (A) 12

Dual N-channel, 20V, 9A

These families of plastic NPN and PNP power transistors are used in applications such as switching regulators, converters, and power amplifiers as general-purpose power amplification and switching, such as output and driver stages.

This dual NPN bipolar transistor is suitable for general purpose amplifier applications. The device features a SOT-363/SC-88 encapsulation and is suitable for low power surface mount applications.