Triode/MOS tube/transistor/module

The NJW21194 Bipolar Complementary Audio Power Transistor uses pierced emitter technology and is designed for high power audio output, disk head positioner and linear applications.

N-channel, 100V, 9.4A, 210mΩ@10V

N-channel, 30V, 7.5A, 22mΩ@10V

Triac, 0.6A, 600V,

N-channel field effect transistor 100V 316A N-MOSFET on-resistance 2.1mR TO-247-3

PNP, Vceo=-160V, Ic=-1A, hfe=160~320

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.