Triode/MOS tube/transistor/module

N-channel drain-source voltage (Vdss): 650V Continuous drain current (Id): 20A Power (Pd): 150W On-resistance (RDS(on)@Vgs,Id): 170mΩ@10V, 5.5A Threshold voltage (Vgs (th)@Id): 2V@250uA

MOS tube, TO-220, N channel, withstand voltage: 40V, current: 60A, 10V internal resistance (Max): 14mΩ, power: 63W

PNP, Vceo=-50V, Ic=-150mA, hfe=120~240

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NPN, Vceo=50V, Ic=100mA

N-MOS 40V 10A SOP-8 13.8mΩ@4.5V

MOS@@continuous drain current (Id) (at 25°C): 0.3A, drain-source voltage (Vdss): 60V, gate-source threshold voltage: 1.4V(Typ.)@ 250uA, drain-source on-resistance: 1.9Ω(Typ.) @Vgs=10V,2.2Ω(typ.) @Vgs=4.5V ,Maximum Power Dissipation (Ta=25°C):0.3W, Type:0.3A/60V Nch