Triode/MOS tube/transistor/module

YJQ40G10A-F1-1100HF

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and superior performance in terms of lower gate charge. This process is specially designed to minimize conduction losses, providing excellent switching performance, dv/dt rate and higher avalanche energy. Therefore, SuperFET II MOSFETs are ideal for switching power supply applications such as PFC, server/telecom power supplies, FPD TV power supplies, ATX power supplies, and industrial power supply applications. The optimized body diode reverse recovery performance of SuperFET II FRFET MOSFETs can eliminate additional components and improve system reliability.

N-channel, 60V, 90A

Field effect transistor (MOSFET) P-channel, VDSS withstand voltage 30V, ID current 4.2A, RDON on-resistance 55mR@VGS 10V(MAX), VGS(th) turn-on voltage 0.7-1.3V,

1200v/300a 2.3Vce

Configuration Single Type N-Ch VDS(V) 60 VGS(V) 20 ID(A)Max. 2.1 VGS(th)(v) 1.5 RDS(ON)(m?)@4.72V 85 Qg(nC)@4.5V 2.1 QgS(nC) 0.6 Qgd(nC) 0.8 Ciss(pF) 295 Coss(pF) 40 Crss(pF) 15

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