Triode/MOS tube/transistor/module
onsemi (Ansemi)
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This is an old model and there is no difference between FGL60N100BNTDTU
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onsemi (Ansemi)
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This bipolar power transistor is suitable for general purpose power supplies and switching outputs, or driver stages in switching regulator, converter, and power amplifier applications.
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Applications: communication modules, industrial control, artificial intelligence, consumer electronics
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CET (Huarui)
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N-channel, 650V, 10A
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TECH PUBLIC (Taizhou)
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MOSFET Type N Drain-Source Voltage (Vdss) (V) 30 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 18/25 Continuous Drain Current ID (A) 5.8
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DIODES (US and Taiwan)
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NCE (Wuxi New Clean Energy)
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ST (STMicroelectronics)
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SHIKUES (Shike)
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CASS (Case)
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Infineon (Infineon)
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onsemi (Ansemi)
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HUAYI (Hua Yi Wei)
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VBsemi (Wei Bi)
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