Triode/MOS tube/transistor/module

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.8 RDS(ON)(m?)@4.151V 8.2 Qg(nC)@4.5V 10 QgS(nC) 3.5 Qgd(nC) 4.2 Ciss(pF) 1200 Coss(pF) 185 Crss(pF) 113

N-channel, 30V 5.8A

IC(A) -0.2 VCEO(V) -40 hFE(β) 100-300 fT(MHZ) 300 VCBO(V) -40 VCE(sat)(W) -0.3 Type PNP

N-channel, 100V, 12A, 100mΩ@10V

N-channel 24A 500V

Drain-source voltage (Vdss): 200V Continuous drain current (Id): 33A MOS tube

PNP -32V -1A