Triode/MOS tube/transistor/module

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -15.3 VGS(th)(v) -1.8 RDS(ON)(m?)@4.184V 30 Qg( nC)@4.5V 6 QgS(nC) 2 Qgd(nC) 3 Ciss(pF) 880 Coss(pF) 145 Crss(pF) 92

N-channel, 150V, 76A, 19mΩ@10V

P-channel, 30V, 4.6A, 60mΩ@10V

Configuration Single Type P-Ch VDS(V) -60 VGS(V) 20 ID(A)Max. -60 VGS(th)(v) -1.85 RDS(ON)(m?)@4.239V 23 Qg(nC) @4.5V - QgS(nC) 11 Qgd(nC) 16 Ciss(pF) 3300 Coss(pF) 265 Crss(pF) 125

N-channel, 60V, 50A, 0.009Ω@10V

Low saturation voltage bipolar transistors are miniature surface mount devices with ultra-low saturation voltage and high current gain capability. These devices are designed for low-voltage, high-speed switching applications that require cost-effective, efficient energy control.

N channel

The FDMS0308AS is suitable for minimizing losses in power conversion applications. Combining advances in silicon and encapsulation technology, it provides the lowest rDS(on) while maintaining excellent switching performance. This device also adds the advantage of a highly efficient monolithic Schottky body diode.