Triode/MOS tube/transistor/module

N-channel, 100V, 2A, 234mΩ@10V; larger rated current than BSS123

Configuration Single Type N-Ch VDS(V) 150 VGS(V) 25 ID(A)Max. 8 VGS(th)(v) - RDS(ON)(m?)@4.285V 60 Qg(nC)@4.5V QgS(nC) 6.2 Qgd(nC) 8 Ciss(pF) 1210 Coss(pF) 105 Crss(pF) 55

Automotive power MOSFETs for compact and efficient designs mounted in DPAK encapsulation with high thermal performance. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

N-channel, 500V, 5A, 1.4Ω@10V

This P-channel MOSFET is produced using an advanced PowerTrench process optimized to minimize on-resistance while maintaining excellent switching performance.

PNP

N-channel, 60V, 0.36A, 1.6Ω@10V