Triode/MOS tube/transistor/module

Suitable for low voltage high speed switching applications in power supplies, converters, power motor control and bridge circuits.

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): -25V Collector Current (Ic): -1.5A Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@800mA HFE: 200-350

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): -80V Collector Current (Ic): -1A Power (Pd): 1.5W Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE (sat)@Ic,Ib): 500mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@150mA, 2V

NPN 25V 50mA 150mW

N-channel, 100V, 6.3A, 0.185Ω@10V