Triode/MOS tube/transistor/module

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

This high current PNP bipolar transistor is suitable for industrial and consumer applications. The device features a SOT-223 encapsulation and is suitable for medium power surface mount applications.

RF Transistor NPN

Type N Drain-Source Voltage (Vdss) 30 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 13 On-Resistance (mΩ) 6.8 Input Capacitance (Ciss) 690 Reverse Transfer Capacitance Crss (pF) 113 Gate Charge (Qg ) 7

MMSTA55-F2-0000HF

P channel -100V -60A

Type N Drain-Source Voltage (Vdss) 40 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) 25 On-Resistance (mΩ) 3.8 Input Capacitance (Ciss) 2650 Reverse Transfer Capacitance Crss (pF) 88 Gate Charge (Qg ) 39