Triode/MOS tube/transistor/module

N channel

N channel

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 115mA Power (Pd): 225mW On-Resistance (RDS(on)@Vgs,Id): 2mΩ@10V,100mA Operating Temperature: +150℃@(Tj)

Crystal array device with rated 50V/500mA drive capability

Type: Dual N-channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 2A, power (Pd): 1W, on-resistance (RDS(on)@Vgs,Id): 60mΩ@2.5V, 1A, on-resistance (RDS(on)@Vgs,Id): 48mΩ@4.5V, 2A, threshold voltage (Vgs(th)@Id): 0.8V@250μA

MOS, TO-263, N-channel, 30V, 100A, 4.5mΩ (Max), 300W

NPN, 50V, 100mA

Field effect transistor (MOSFET) Type: N-channel Drain-source voltage (Vdss): 30V Continuous drain current (Id): 100A On-resistance (RDS(on)@Vgs,Id): 5.5mΩ@10V, 30A