Triode/MOS tube/transistor/module
AGM-Semi (core control source)
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VISHAY (Vishay)
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TECH PUBLIC (Taizhou)
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onsemi (Ansemi)
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ROHM (Rohm)
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VBsemi (Wei Bi)
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P-channel, -60V, -30A, 61mΩ@-10V
Təsvir
SPTECH (Shenzhen Quality Super)
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AnBon (AnBon)
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AnBon (AnBon)
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GOFORD (valley peak)
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ST (STMicroelectronics)
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onsemi (Ansemi)
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SUPERFET III MOSFETs are ON Semiconductor's new family of high-voltage super-junction (SJ) MOSFETs that utilize charge-balancing technology to achieve exceptionally low on-resistance and excellent performance in terms of lower gate charge. This advanced technology is designed to minimize conduction losses, provide excellent switching performance, and can withstand extreme dv/dt rates. Therefore, SUPERFET III MOSFETs are suitable for various power systems, enabling system miniaturization and higher performance. The optimized body diode reverse recovery performance of SUPERFET III FRFET MOSFETs can eliminate additional components and improve system reliability.
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LONTEN (Longteng Semiconductor)
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Infineon (Infineon)
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N-channel, 100V, 33A, 44mΩ@10V
Təsvir
SPTECH (Shenzhen Quality Super)
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Jilin Huawei
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N-Channel Enhancement Mode Field Effect Transistor
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DIODES (US and Taiwan)
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SHIKUES (Shike)
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YANGJIE (Yang Jie)
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Infineon (Infineon)
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N-channel, 60V, 81A, 12mΩ@10V
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