Triode/MOS tube/transistor/module

NPN,Vceo=400V,Ic=1A,hfe=20~25

Configuration N+P Type P-Ch VDS(V) -30 VGS(V) 20 ID(A)Max. -19 VGS(th)(v) - RDS(ON)(m?)@4.441V 37 Qg(nC )@4.5V 9.8 QgS(nC) 2.2 Qgd(nC) 3.4 Ciss(pF) 930 Coss(pF) 148 Crss(pF) 115

This device is specifically designed for battery charging or load switching in cell phones and other ultra-portable applications. It has a MOSFET with low on-resistance. The MicroFET 1.6x1.6 thin encapsulation provides excellent thermal performance for its physical size, making it ideal for linear mode applications.

Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 50 VGS(th)(v) 1.8 RDS(ON)(m?)@4.226V 7.2 Qg(nC)@4.5V 9.5 QgS(nC) 2.9 Qgd(nC) 3.8 Ciss(pF) 1100 Coss(pF) 440 Crss(pF) 56