Triode/MOS tube/transistor/module

P-channel, -12V, -2.5A

P-CH, VDS=-40V, Rds(on)=14mohm, ID=-51A

NPN transistor, HFE: 200-400, 100mA 45V

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT integrates these components into one device, eliminating the need for these external components. Using BRT can reduce system cost and save board space.

N-channel, 30V, 4A, 110mΩ@2.5V

N-channel, 50V, 3A, 130mΩ@10V

Automotive Power MOSFETs for compact and efficient designs mounted in 5x6mm flat lead encapsulation with high thermal performance. Wettable flank options available for enhanced optical detection. AEC-Q101 qualified MOSFETs with Production Part Approval Process (PPAP) capability for automotive applications.

P-type MOS tube@@VDS-100V,ID-20A,RDS(on),Typ@VGS=10V75mR