Triode/MOS tube/transistor/module

Semiconductor Transistor Field Effect Transistor MOS tube, TO-252, N channel, withstand voltage: 150V, current: 12A, 10V internal resistance (Max): 0.36Ω, 4.5V internal resistance (Max): 0.42Ω, power: 50W

N-channel, 600V, 7A, 1.3Ω

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 25V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 600mV@500mA HFE: 200-350

These N-channel power MOSFETs are produced using the MegaFET process. This process uses a feature size close to that of an LSI integrated circuit, enabling optimal utilization of silicon, resulting in excellent performance. These devices are suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. Such transistors can be run directly in integrated circuits. The previous development model was TA09770.

Type: P-Channel Drain-Source Voltage (Vdss): -30V Continuous Drain Current (Id): -15A On-Resistance (RDS(on)@Vgs,Id): 7.5mΩ@10V, 12mΩ@4.5V, Threshold Voltage (Vgs(th)@Id): -1.4V to 2.7VDS=VGSID=-250μA