Triode/MOS tube/transistor/module

Transistor Type: PNP Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 300mV@100mA, 10mA DC current gain (hFE@Ic,Vce): 300@1mA, 5V Characteristic frequency (fT): 150MHz Operating temperature: +150℃@(Tj)

N-channel, 40V, 100A, 5.2mΩ@10V

PNP, Vceo=-32V, Ic=-2A, hfe=180~390

N-channel, 600V, 16A, 400mΩ@10V

Type N VDSS(V) 500 ID@TC=94?C(A) 13 PD@TC=94?C(W) 50 VGS(V) ±30 RDS(on)(m?)Max.@TC= 25 ?C VGS=4.74V -

N-channel, 500V, 40A, 110mΩ@10V

NPN

High Voltage Super Junction MOSFET