Triode/MOS tube/transistor/module

High voltage, high current Darlington transistor array 7 channels

Type N Drain-Source Voltage (Vdss) 80 Threshold Voltage (Vgs) 20 Continuous Drain Current (Id) On-Resistance (mΩ) 3.9 Input Capacitance (Ciss) 3635 Reverse Transfer Capacitance Crss (pF) 91 Gate Charge (Qg) 74

N-channel, 650V, 1.85?@10V, 5.0A

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench process, which is specially tailored to minimize on-state resistance while maintaining excellent switching performance.

Triac parameters VDRM/ VRRM 600V RMS ON state current IT(RMS) 0.8A

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

MOS tube type: P channel Drain-source voltage (Vdss): 20V Continuous drain current (Id): 4A Power (Pd): 1.3W On-resistance (RDS(on)@Vgs,Id): 35Ω@4.5V, 4A

N-channel, 60V, 14.9A

N-channel, 1500V, 2.5A, 9Ω@10V