Triode/MOS tube/transistor/module

PNP, Vceo=-150V, Ic=-0.6A, hfe=200~300, silk screen 2L

4A

This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.

N-channel, 40V, 10A, 13mΩ@10V

P-channel, -100V, -9.4A, 290mΩ@-10V

Drain-source voltage (Vdss): 200V Continuous drain current (Id): 50A MOS tube

P-channel, -30V, -12A, 0.021Ω@-10V

Transistor type: PNP Collector-emitter breakdown voltage (Vceo): 65V Collector current (Ic): 100mA Power (Pd): 200mW DC current gain (hFE@Ic,Vce): 125@2mA, 5V BC856A-F2-0000HF

P-channel -15V -4.3A