Triode/MOS tube/transistor/module

NPN 80V1A Magnification 100~250

Semiconductor transistor field effect transistor MOS tube, TO-220F, P channel, withstand voltage: -60V, current: -60A, 10V internal resistance (Max): 0.0195Ω, 4.5V internal resistance (Max): 0.022Ω, power: 60W

MOSFET, P-channel 30V/12V 4.2A VGS(th)=1V 45mΩ@4.2A&10V, SOT-23

Configuration N+P Type P-Ch VDS(V) -40 VGS(V) 20 ID(A)Max. -5.1 VGS(th)(v) -1.6 RDS(ON)(m?)@4.343V 55 Qg( nC)@4.5V - QgS(nC) 5.7 Qgd(nC) 4.6 Ciss(pF) 1100 Coss(pF) 100 Crss(pF) 80

This family of digital transistors is intended to replace a single device and its external resistor bias network. The bias resistor transistor (BRT) consists of a transistor and a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. The BRT eliminates the need for these separate components by integrating them into a single device. Using BRT can reduce system cost and save board space.

N-channel, 60V, 4.2A, 60mΩ@10V

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MOSFET Type N Drain-Source Voltage (Vdss) (V) 70 Threshold Voltage VGS ±20 Vth(V) 2-4 On-Resistance RDS(ON) (mΩ) 6.7/7.8 Continuous Drain Current ID (A) 80