Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 60V Continuous Drain Current (Id): 53A Power (Pd): 50W On-Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A Threshold Voltage ( Vgs(th)@Id): 1.7V@250uA Gate charge (Qg@Vgs): 45.2nC@10V Input capacitance (Ciss@Vds): 1.7nF@30V, Vds=60V Id=53A Rds=10mΩ, operating temperature : -55℃~+150℃@(Tj)

VDRM(V) 600 IT(RMS)(A) 0.8 IGT(uA) ≤200 VGT(V) 0.7-0.8 TJ(?C ) 125