Triode/MOS tube/transistor/module

NPN, Vceo=45V, Ic=100mA, hfe=200~450

Field Effect Transistor (MOSFET) P+P Ditch VDSS:30V ID:6.5A

Type: P-Channel Drain-Source Voltage (Vdss): 18V Continuous Drain Current (Id): 2A Power (Pd): 312mW On-Resistance (RDS(on)@Vgs,Id): 60Ω@-4.5V,-2A Threshold voltage (Vgs(th)@Id): -1V@250uA

PNP, Vcc=-50V, Io=-100mA, Pd=200mW

Type: N-channel Drain-source voltage (Vdss): -30V Continuous drain current (Id): 6A Power (Pd): 1.56W On-resistance (RDS(on)