Triode/MOS tube/transistor/module

Type: N-Channel Drain-Source Voltage (Vdss): 40V Continuous Drain Current (Id): 330A Power (Pd): 305W On-Resistance (RDS(on)@Vgs,Id): 0.92mΩ@10V,40A Threshold Voltage (Vgs(th)@Id): 1.8V@250uA Gate charge (Qg@Vgs): 65nC@10V Input capacitance (Ciss@Vds): 7.5nF@20V, Vds=40V Id=330A Rds=0.92mΩ, working Temperature: -55℃~+150℃@(Tj);

NPN, Vcc=50V, Io=100mA, Pd=200mW

Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 45V Collector Current (Ic): 500mA Power (Pd): 300mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 700mV@500mA, 50mA DC current gain (hFE@Ic,Vce): 100@100mA, 1V Characteristic frequency (fT): 100MHz Operating temperature: -55℃~+150℃@(Tj)