Triode/MOS tube/transistor/module

Collector-base reverse breakdown voltage-40V, collector-emitter reverse breakdown voltage-25V, collector current IC-500mA,

This N-channel MOSFET is produced using the advanced PowerTrench process, which is adapted to minimize on-resistance while maintaining excellent switching performance.

Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 85 VGS(th)(v) 1.5 RDS(ON)(m?)@4.361V 7.8 Qg(nC)@4.5V 20 QgS(nC) 7.6 Qgd(nC) 7.2 Ciss(pF) 2295 Coss(pF) 570 Crss(pF) 210

N-channel, 600V, 5A, 1Ω@10V

N-channel, 600V, 5A, 1Ω@10V

N-channel, 600V, 5A, 1Ω@10V

P-channel, -20V, -3.1A, 112mΩ@4.5V

Collector-emitter breakdown voltage (Vceo): 45V Collector current (Ic): 1A Power (Pd): 1.3W DC current gain (hFE@Ic,Vce): 100@150mA, 2V

Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 40V Collector current (Ic): 200mA Power (Pd): 150mW Collector-emitter saturation voltage (VCE(sat)@Ic,Ib): 300mV@50mA ,5mA DC current gain (hFE@Ic,Vce): 100@10mA,1V Characteristic frequency (fT): 300MHz Operating temperature: -55℃~+150℃@(Tj)

This family of digital transistors is suitable for replacing a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) consists of a monolithic bias network consisting of a single transistor and two resistors. Series base resistor and base resistor. The BRT eliminates the need for these separate components, which are integrated into a single device. Using BRT can reduce system cost and save board space.

YJD45G10B-F1-0000HF

UMH11N-F2-0000HF